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The nanoscale analysis of MOSFET switching loss

S C Lee and K F Tsang

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A nanoscale analysis of MOSFET switching loss is presented. A new analytical method based on drift diffusive and quantum transport principles with a non-equilibrium Green's function method is proposed. For the first time, the switching energy in a MOSFET is expressed as a function of the dc bias, operating frequency, dimensions, doping concentration and contact materials. The results provide a remarkable insight into the choice of geometries and materials for transistor designers.


PACS

85.30.Tv Field effect devices

85.30.De Semiconductor-device characterization, design, and modeling

85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Subjects

Electronics and devices

Semiconductors

Dates

Issue 11 (November 2009)

Received 9 March 2009, in final form 31 August 2009

Published 20 October 2009



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