S C Lee and K F Tsang 2009 Semicond. Sci. Technol. 24 115015 doi:10.1088/0268-1242/24/11/115015
The nanoscale analysis of MOSFET switching loss
S C Lee and K F Tsang
Show affiliationsA nanoscale analysis of MOSFET switching loss is presented. A new analytical method based on drift diffusive and quantum transport principles with a non-equilibrium Green's function method is proposed. For the first time, the switching energy in a MOSFET is expressed as a function of the dc bias, operating frequency, dimensions, doping concentration and contact materials. The results provide a remarkable insight into the choice of geometries and materials for transistor designers.
- PACS
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85.30.De Semiconductor-device characterization, design, and modeling
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
- Subjects
- Dates
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Issue 11 (November 2009)
Received 9 March 2009, in final form 31 August 2009
Published 20 October 2009
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The nanoscale analysis of MOSFET switching loss
S C Lee and K F Tsang 2009 Semicond. Sci. Technol. 24 115015
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