Z Y Tan et al 2009 Semicond. Sci. Technol. 24 115014 doi:10.1088/0268-1242/24/11/115014
Z Y Tan1, X G Guo1, J C Cao1, H Li1, X Wang1, S L Feng1, Z R Wasilewski2 and H C Liu2
Show affiliationsWe have performed current–voltage (I–V) measurements on a terahertz quantum-well photodetector (QWP) at different temperatures and employed an emission-capture model to simulate the I–V curves. A temperature-dependent vertical electron drift mobility has been used to fit the curves from 7 K to 20 K. Photocurrents caused by 300 K background radiation have also been measured at different temperatures and a background-limited infrared performance (blip) temperature of 12 K for this terahertz detector has been determined. The current–temperature (I–T) curves derived from the measured dark I–V curves indicate that the thermionic emission process is the major mechanism for dark current in this terahertz detector.
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
Condensed matter: electrical, magnetic and optical
Instrumentation and measurement
Issue 11 (November 2009)
Received 4 June 2009, in final form 18 September 2009
Published 20 October 2009
Z Y Tan et al 2009 Semicond. Sci. Technol. 24 115014
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