G Belenky et al 2009 Semicond. Sci. Technol. 24 115013 doi:10.1088/0268-1242/24/11/115013
G Belenky1, L Shterengas1,3, D Wang1, G Kipshidze1 and L Vorobjev2
Show affiliationsGaSb-based diode lasers with type-I quantum-well active region located either in the center of quinary AlInGaAsSb broadened waveguide or shifted to the p-cladding side were fabricated and characterized. Devices with narrower 'p-side waveguide' demonstrate better performance. We explain the phenomenon by reduced hole concentration in the waveguide region of the device. At 12 °C, lasers with optimized design generate above 65 mW of continuous wave output power at 3.2 µm.
42.55.Px Semiconductor lasers; laser diodes
42.82.Cr Fabrication techniques; lithography, pattern transfer
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
Issue 11 (2 November 2009)
Received 22 July 2009
Published 9 October 2009
G Belenky et al 2009 Semicond. Sci. Technol. 24 115013
J Stötzel et al 2009 J. Phys.: Conf. Ser. 190 012162
L Y Zhao et al 2007 Nanotechnology 18 245703
Leonidas Pantelidis 2008 J. Phys. A: Math. Theor. 41 105101
Eun Ju Bae et al 2007 Nanotechnology 18 495203
Tomohiro Matsuda 2009 Class. Quantum Grav. 26 145016
Stephanie N Bogle et al 2007 J. Phys.: Condens. Matter 19 455204
D J Kaup and Jianke Yang 2009 Inverse Problems 25 105010
J Lenells and A S Fokas 2009 Inverse Problems 25 115006
N Unno et al 2009 J. Phys.: Conf. Ser. 191 012014