E-M Pavelescu et al 2008 Semicond. Sci. Technol. 23 085022 doi:10.1088/0268-1242/23/8/085022
E-M Pavelescu1, C Gilfert1, J P Reithmaier1, A Martín-Mínguez2 and I Esquivias2
Show affiliationsA 920 nm InGaAs/(Al)GaAs high-power quantum-dot laser material was developed with optimized geometric parameters, i.e., dot size, dot density and size distribution, and an appropriate laser design to allow an internal temperature compensation of the emission wavelength by a tailored spectral gain profile. The laser structure was grown by solid source molecular-beam epitaxy and consisted in a separate confinement heterostructure design with a large optical cavity. Due to the cavity length dependence of the total cavity losses, the operation point is shifted and reached a very low temperature coefficient of 0.081 nm K−1 for a cavity length of 2.6 mm.
Issue 8 (August 2008)
Received 2 May 2008, in final form 11 June 2008
Published 24 July 2008
E-M Pavelescu et al 2008 Semicond. Sci. Technol. 23 085022
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