R K Oxland and F Rahman 2008 Semicond. Sci. Technol. 23 085020 doi:10.1088/0268-1242/23/8/085020
Fluid phase passivation and polymer encapsulation of InP/InGaAs heterojunction bipolar transistors
R K Oxland and F Rahman
Show affiliationsThis paper reports on the development of effective passivation techniques for improving and stabilizing the characteristics of InP/InGaAs heterojunction bipolar transistors. Two different methods for carrying out sulfur-based surface passivations are compared. These include exposure to gaseous hydrogen sulfide and immersion treatment in an ammonium sulfide solution. The temporal behaviour of effects resulting from such passivation treatments is reported. It is shown that liquid phase passivation has a larger beneficial effect on device performance than gas phase passivation. This is explained in terms of the polarity of passivating species and the exposed semiconductor surface. Finally, device encapsulation in a novel chalcogenide polymer is shown to be effective in preserving the benefits of surface passivation treatments. The relevant properties of this encapsulation material are also discussed.
- PACS
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85.30.De Semiconductor-device characterization, design, and modeling
- Subjects
- Dates
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Issue 8 (August 2008)
Received 26 March 2008, in final form 30 May 2008
Published 16 July 2008
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Fluid phase passivation and polymer encapsulation of InP/InGaAs heterojunction bipolar transistors
R K Oxland and F Rahman 2008 Semicond. Sci. Technol. 23 085020
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