A BenMoussa et al 2008 Semicond. Sci. Technol. 23 035026 doi:10.1088/0268-1242/23/3/035026
A BenMoussa1, A Soltani2, K Haenen3,4, U Kroth5, V Mortet3, H A Barkad2, D Bolsee6, C Hermans6, M Richter5, J C De Jaeger2 and J F Hochedez1
Show affiliationsA new large-size metal–semiconductor–metal photoconductor device of 4.6 mm in diameter based on diamond material has been reprocessed and characterized in the vacuum-ultraviolet (VUV) wavelength range. The metal finger contacts have been processed to 2 µm in width with spacing between the contacts of 5 µm for a bias voltage of 5 V. The responsivity, stability, linearity and homogeneity have been tested. Solutions and progresses on diamond processing are identified and are reported. In the VUV wavelength range of interest, the diamond photodetector is sensitive with a maximum response of 48 mA W−1 at 210 nm with a corresponding external quantum efficiency of 42%, homogenous and stable under short irradiation. It indicates a 200–400 nm rejection ratio of more than four orders of magnitude and demonstrates the advantages of diamond-based detectors in terms of high rejection ratio and high output signal for VUV solar observation missions.
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Bt Optoelectronic device characterization, design, and modeling
Issue 3 (March 2008)
Received 26 October 2007, in final form 11 January 2008
Published 18 February 2008
A BenMoussa et al 2008 Semicond. Sci. Technol. 23 035026
Daniel B. Seaton and Terry G. Forbes 2009 ApJ 701 348
Steven J Schiff and Tim Sauer 2008 J. Neural Eng. 5 1
Pochung Chen et al J. Stat. Mech. (2009) P10001
Yong-Jun Liu et al 2006 J. Phys.: Condens. Matter 18 1805
Gu Chang-Zhi et al 2002 Chinese Phys. 11 1042
Raúl Rabadán and Gary Shiu JHEP05(2003)045
A Dimakis and F Muller-Hoissen 1994 J. Phys. A: Math. Gen. 27 3159
Thomas Filk 2000 Class. Quantum Grav. 17 4841
Manfred Requardt 2002 J. Phys. A: Math. Gen. 35 759