E Havard et al 2008 Semicond. Sci. Technol. 23 035001 doi:10.1088/0268-1242/23/3/035001
E Havard1,2, T Camps1,2, V Bardinal1, L Salvagnac1, C Armand3, C Fontaine1 and S Pinaud1
Show affiliationsThe effects of thermal annealing on optically transparent electrodes of ITO (indium tin oxide) contact deposited on p-type Be-doped GaAs have been investigated by means of the transfer length method and secondary ion mass spectroscopy measurements. This study shows that the temperature that minimizes the specific contact resistance of ITO/GaAs (500 °C) greatly differs from the temperature that leads to a maximum conductivity of the ITO layer (600 °C) and from the values reported on ITO/GaAs in the literature. The oxygen diffusion in the semiconductor layer and its interaction with the beryllium dopant is pointed out to explain these differences.
73.40.Cg Contact resistance, contact potential
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.60.Dv Thermal stability; thermal effects
85.60.-q Optoelectronic devices
Issue 3 (March 2008)
Received 25 October 2007, in final form 4 December 2007
Published 25 January 2008
E Havard et al 2008 Semicond. Sci. Technol. 23 035001
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