S L Rumyantsev et al 2008 Semicond. Sci. Technol. 23 105001 doi:10.1088/0268-1242/23/10/105001
S L Rumyantsev1,2, K Fobelets3, D Veksler1, T Hackbarth4 and M S Shur1
Show affiliationsStrained-Si modulation doped field effect transistors have been studied as detectors of 0.2 THz and 1.6 THz electromagnetic radiation at room temperature. The difference in the gate voltage dependences for 0.2 THz and 1.6 THz radiation and spatial pattern of the transistor response to focused 1.6 THz radiation confirms that the mechanism of detection is linked to the excitations of the two-dimensional electrons in the device channel.
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
Issue 10 (October 2008)
Received 12 May 2008
Published 28 August 2008
S L Rumyantsev et al 2008 Semicond. Sci. Technol. 23 105001
Liao Ming-Liang et al 2009 Chinese Phys. Lett. 26 114207
L Blackburn et al 2008 Class. Quantum Grav. 25 184004
Yuan Chang-Qing et al 2009 Chinese Phys. Lett. 26 118701
W Schröer and V R Vale 2009 J. Phys.: Condens. Matter 21 424119
Todd D Fansler et al 2009 Meas. Sci. Technol. 20 125401
Alessandro Arcovito et al 2009 J. Phys.: Conf. Ser. 190 012195
M Patra et al 2009 J. Phys.: Condens. Matter 21 486003
Andrea Di Cicco et al 2009 J. Phys.: Conf. Ser. 190 012043
Kiyofumi Nitta et al 2009 J. Phys.: Conf. Ser. 190 012098