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Strained-Si modulation doped field effect transistors as detectors of terahertz and sub-terahertz radiation

S L Rumyantsev1,2, K Fobelets3, D Veksler1, T Hackbarth4 and M S Shur1

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Strained-Si modulation doped field effect transistors have been studied as detectors of 0.2 THz and 1.6 THz electromagnetic radiation at room temperature. The difference in the gate voltage dependences for 0.2 THz and 1.6 THz radiation and spatial pattern of the transistor response to focused 1.6 THz radiation confirms that the mechanism of detection is linked to the excitations of the two-dimensional electrons in the device channel.


PACS

85.30.Tv Field effect devices

07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Subjects

Electronics and devices

Instrumentation and measurement

Semiconductors

Dates

Issue 10 (October 2008)

Received 12 May 2008

Published 28 August 2008



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