S L Rumyantsev et al 2008 Semicond. Sci. Technol. 23 105001 doi:10.1088/0268-1242/23/10/105001
S L Rumyantsev1,2, K Fobelets3, D Veksler1, T Hackbarth4 and M S Shur1
Show affiliationsStrained-Si modulation doped field effect transistors have been studied as detectors of 0.2 THz and 1.6 THz electromagnetic radiation at room temperature. The difference in the gate voltage dependences for 0.2 THz and 1.6 THz radiation and spatial pattern of the transistor response to focused 1.6 THz radiation confirms that the mechanism of detection is linked to the excitations of the two-dimensional electrons in the device channel.
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
Issue 10 (October 2008)
Received 12 May 2008
Published 28 August 2008
S L Rumyantsev et al 2008 Semicond. Sci. Technol. 23 105001
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