D Y Chen et al 2008 Semicond. Sci. Technol. 23 015013 doi:10.1088/0268-1242/23/1/015013
D Y Chen1, D Y Wei1, J Xu1, P G Han1, X Wang1, Z Y Ma1, K J Chen1, W H Shi2 and Q M Wang2
Show affiliationsNano-crystalline Si/SiO2 multilayers were prepared by alternately changing the ultra-thin amorphous Si film deposition and the in situ plasma oxidation process followed by the post-annealing treatments. Well-defined periodic structures can be achieved with 2.5 nm thick SiO2 sublayers. It is shown that the size of formed nano-crystalline Si is about 3 nm. Room temperature electroluminescence can be observed and the spectrum contains two luminescence bands located at 650 nm and 520 nm. In order to improve the hole injection probability, p–i–n structures containing a nanocrystalline Si/SiO2 luminescent layer were designed and fabricated on different p-type substrates. It is found that the turn-on voltage of p–i–n structures is obviously reduced and the luminescence intensity increases by 50 times. It is demonstrated that the use of a heavy-doped p-type substrate can increase the luminescence intensity more efficiently compared with the light-doped p-type substrate due to the enhanced hole injection.
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
Condensed matter: electrical, magnetic and optical
Surfaces, interfaces and thin films
Issue 1 (January 2008)
Received 25 July 2007, in final form 1 November 2007
Published 12 December 2007
D Y Chen et al 2008 Semicond. Sci. Technol. 23 015013
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