E Przeździecka et al 2007 Semicond. Sci. Technol. 22 10 doi:10.1088/0268-1242/22/2/002
E Przeździecka1, E Kamińska2, K P Korona3, E Dynowska1, W Dobrowolski1, R Jakieła1, Ł Kłopotowski1 and J Kossut4
Show affiliationsZnO doped with N and/or As layers was fabricated by thermal oxidation of ZnTe films grown by MBE on different substrates. Hall effect measurements demonstrated p-type conductivity with a hole concentration of ~5 × 1019 cm−3 for ZnO:As and ZnO:As:N on GaAs substrates and ~6 × 1017 cm−3 for ZnO:N on ZnTe substrates. The concentration of N and As atoms in ZnO is estimated to be ~1020 cm−3. This suggested that simple substitutional N atoms form acceptor impurities with a smaller efficiency than an As-related complex, probably AsZn–2VZn. In particular, we were able to distinguish between nitrogen and arsenic acceptor-related luminescence. Optical studies showed meaningful differences of the PL features in samples with different acceptors, grown on different substrates.
72.20.My Galvanomagnetic and other magnetotransport effects
61.72.J- Point defects and defect clusters
Issue 2 (February 2007)
Received 22 May 2006, in final form 23 September 2006
Published 21 November 2006
E Przeździecka et al 2007 Semicond. Sci. Technol. 22 10
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