A Lanacer et al 2007 Semicond. Sci. Technol. 22 1282 doi:10.1088/0268-1242/22/12/007
A Lanacer1, N Shtinkov2, P Desjardins3, R A Masut3 and R Leonelli1
Show affiliationsWe have studied the optical properties of ultrathin InAs/InP quantum wells and Stranski–Krastanov nanostructures using photoluminescence and photoluminescence excitation experiments. For InAs epilayers thinner than 2.4 monolayers, the emission spectrum consists of a single peak and the ground-state exciton energy is in good agreement with predictions based on the tight-binding method for ultrathin quantum wells. Beyond this thickness, the photoluminescence spectra evolve to a multimodal emission indicative of the presence of families of quantum dots with small heights. The emission of these quantum dots is blue-shifted significantly (~100 meV) from the predicted values. The discrepancy is explained by As/P intermixing that occurs during quantum dot formation.
Condensed matter: electrical, magnetic and optical
Issue 12 (December 2007)
Received 10 July 2007, in final form 11 July 2007
Published 1 November 2007
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