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Effective mass measurement: the influence of hole band nonparabolicity in SiGe/Ge quantum wells

Benjamin Rössner1, Hans von Känel1,2, Daniel Chrastina2, Giovanni Isella2 and Bertram Batlogg1

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We show that the common practice of identifying effective masses derived from Shubnikov-de Haas (SdH) and cyclotron resonance measurements with zero-field effective density of states (DOS) masses must be scrutinized when nonparabolicity effects come into play. To this end, the temperature dependence of theoretical SdH oscillations expected for strained-Ge quantum wells is explicitly simulated from calculations of the Landau level structure, giving rise to theoretical masses in exact analogy to a SdH measurement. The calculations are performed within a 6 × 6 envelope function approximation (EFA). The same method is used to calculate the zero-field DOS mass. Our analysis shows that the pronounced nonparabolicity of the heavy hole band leads to a nonlinear magnetic field dependence of Landau level energies invalidating the assumption of equal cyclotron and DOS masses. In particular, we show that at high carrier density the DOS mass is significantly underestimated in a SdH measurement.


PACS

73.63.Hs Quantum wells

73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

71.70.Di Landau levels

73.21.Fg Quantum wells

72.20.My Galvanomagnetic and other magnetotransport effects

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Nanoscale science and low-D systems

Dates

Issue 1 (January 2007)

Received 14 May 2006, in final form 27 September 2006

Published 7 December 2006



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