T Berer et al 2007 Semicond. Sci. Technol. 22 S137 doi:10.1088/0268-1242/22/1/S32
T Berer, D Pachinger, G Pillwein, M Mühlberger, H Lichtenberger, G Brunthaler and F Schäffler
Show affiliationsA Schottky split gate technique is used to form lateral quantum dots in the two-dimensional electron gases of a high-mobility Si/SiGe heterostructure. e-beam defined palladium gates show Schottky barriers with very well controlled leakage currents. At low temperatures we observe Coulomb-blockade and stability diamonds on lateral quantum dots containing less than 25 electrons. The experiments demonstrate that, in contrast to recent reports, Schottky gates are a feasible approach for the fabrication and integration of single electron transistors in the strained Si/SiGe heterostructure.
85.35.Gv Single electron devices
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
03.67.Lx Quantum computation architectures and implementations
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.30.+y Surface double layers, Schottky barriers, and work functions
Surfaces, interfaces and thin films
Issue 1 (January 2007)
Received 11 May 2006, in final form 25 August 2006
Published 5 December 2006
T Berer et al 2007 Semicond. Sci. Technol. 22 S137
B Willke et al 2002 Class. Quantum Grav. 19 1377
R J Radwanski 1987 J. Phys. F: Met. Phys. 17 267
Adrian P Gentle et al 2004 Class. Quantum Grav. 21 83
C A Haberzettl 2002 Nanotechnology 13 R9
G D Barrera et al 2005 J. Phys.: Condens. Matter 17 R217
J Amundson et al 2006 J. Phys.: Conf. Ser. 46 205
A S Kheifets and I A Ivanov 2006 J. Phys. B: At. Mol. Opt. Phys. 39 1731
A S Carstea 2000 Nonlinearity 13 1645
T T Hyde et al 2004 Class. Quantum Grav. 21 S635