T Berer et al 2007 Semicond. Sci. Technol. 22 S137 doi:10.1088/0268-1242/22/1/S32
T Berer, D Pachinger, G Pillwein, M Mühlberger, H Lichtenberger, G Brunthaler and F Schäffler
Show affiliationsA Schottky split gate technique is used to form lateral quantum dots in the two-dimensional electron gases of a high-mobility Si/SiGe heterostructure. e-beam defined palladium gates show Schottky barriers with very well controlled leakage currents. At low temperatures we observe Coulomb-blockade and stability diamonds on lateral quantum dots containing less than 25 electrons. The experiments demonstrate that, in contrast to recent reports, Schottky gates are a feasible approach for the fabrication and integration of single electron transistors in the strained Si/SiGe heterostructure.
85.35.Gv Single electron devices
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
03.67.Lx Quantum computation architectures and implementations
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.30.+y Surface double layers, Schottky barriers, and work functions
Surfaces, interfaces and thin films
Issue 1 (January 2007)
Received 11 May 2006, in final form 25 August 2006
Published 5 December 2006
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