Shogo Mochizuki et al 2007 Semicond. Sci. Technol. 22 S132 doi:10.1088/0268-1242/22/1/S31
Shogo Mochizuki1, Akira Sakai1, Osamu Nakatsuka2, Hiroki Kondo1, Katsunori Yukawa1, Koji Izunome3, Takeshi Senda3, Eiji Toyoda3, Masaki Ogawa4 and Shigeaki Zaima1
Show affiliationsWe have investigated dislocation morphology and strain relaxation mechanisms of SiGe and Ge sub-micron wide striped mesa lines patterned on Si(0 0 1) substrates. The patterning of SiGe and Ge layers principally leads to asymmetric elastic strain relaxation. Post-patterning anneal induces 60° dislocation introduction to relax the strain but the narrower the line width the more dominant is the elastic strain relaxation. In the case of 250 nm wide SiGe lines, 60° dislocation introduction along the line is critically suppressed so that asymmetric strain distribution is realized. On the other hand, for the Ge line structure, pre-formed pure edge dislocations elongate along both orthogonal directions at the heterointerface independent of the line geometry even with the line width of 250 nm. Thus strain relaxation occurs symmetrically and rigidly. These results can be explained by deference of the introduction and propagation mechanisms of 60° and pure-edge dislocations.
68.60.Bs Mechanical and acoustical properties
68.37.Lp Transmission electron microscopy (TEM)
68.47.Fg Semiconductor surfaces
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
Issue 1 (January 2007)
Received 31 May 2006, in final form 14 August 2006
Published 5 December 2006
Shogo Mochizuki et al 2007 Semicond. Sci. Technol. 22 S132
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