Guogong Wang et al 2007 Semicond. Sci. Technol. 22 S84 doi:10.1088/0268-1242/22/1/S20
Guogong Wang, Hao-Chih Yuan and Zhenqiang Ma
Show affiliationsThe lateral scaling issues of the emitter stripe width of large-area power SiGe heterojunction bipolar transistors (HBTs) are analytically studied and experimentally verified. It is found that, due to increased parasitics along with the increase of device area, the maximum oscillation frequency (fmax) of a power SiGe HBT cannot be improved monotonically with the shrinking of the emitter stripe width, which is different from the downscaling of the low-power (few emitter stripes) counterparts. It is concluded that the emitter stripe width of large-area devices ought to be properly upscaled, relative to that of low-power devices, in order to optimize the RF performance of large-area SiGe power HBTs.
85.30.De Semiconductor-device characterization, design, and modeling
Issue 1 (January 2007)
Received 12 May 2006, in final form 5 July 2006
Published 30 November 2006
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