G Isella et al 2007 Semicond. Sci. Technol. 22 S26 doi:10.1088/0268-1242/22/1/S06
Heterojunction photodiodes fabricated from Ge/Si (1 0 0) layers grown by low-energy plasma-enhanced CVD
G Isella1,2, J Osmond1, M Kummer2, R Kaufmann3 and H von Känel1,2
Show affiliationsWe have fabricated a series of p-i-n Ge/Si heterojunction photodetectors with different thicknesses of the nominally intrinsic Ge layer. Epitaxial Ge was deposited on Si(1 0 0) using low-energy plasma-enhanced CVD (LEPECVD) followed by cyclic annealing. The residual tensile strain induced by the annealing procedure lowers the direct energy gap EΓ by ΔEΓ = 20 meV, increasing the responsivity at the Ge absorption edge. Responsivities of 350 mA W−1 at 1.30 µm and 470 mA W−1 at 1.55 µm were obtained for a 3 µm thick photodiode under 3V reverse bias.
- PACS
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Bt Optoelectronic device characterization, design, and modeling
- Subjects
- Dates
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Issue 1 (January 2007)
Received 12 May 2006, in final form 16 June 2006
Published 28 November 2006
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Heterojunction photodiodes fabricated from Ge/Si (1 0 0) layers grown by low-energy plasma-enhanced CVD
G Isella et al 2007 Semicond. Sci. Technol. 22 S26
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