N Hirashita et al 2007 Semicond. Sci. Technol. 22 S21 doi:10.1088/0268-1242/22/1/S05
N Hirashita1, Y Moriyama1, N Sugiyama1, E Toyoda2 and S Takagi3
Show affiliationsMisfit strain relaxation in tensile-strained Si grown at 600 °C on (0 0 1) SiGe-on-insulator substrates is experimentally studied for a tensile strain range between 0.4 and 1.2%. The critical thickness is found to be rather thinner than Houghton's critical thickness for a compressively-mismatched SiGe/Si(0 0 1) system. The thinner critical thickness in tensile-strained Si is attributed to the fact that the stress-relieving misfit dislocations are 90° partial dislocations, instead of 60° misfit dislocations for the compressive SiGe/Si(0 0 1) system. With increasing strained-Si layer thickness thicker than the critical thickness, 60° misfit dislocation is found to be increasingly formed but the strain relaxation is sluggish. For a supercritical thickness ten times thicker than the critical thickness the tensile strain mostly remains. The initial strain relaxation is discussed in terms of the misfit dislocation morphology.
68.60.Bs Mechanical and acoustical properties
73.61.Cw Elemental semiconductors
68.55.-a Thin film structure and morphology
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
Issue 1 (January 2007)
Received 12 May 2006, in final form 23 June 2006
Published 28 November 2006
N Hirashita et al 2007 Semicond. Sci. Technol. 22 S21
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