T K Ko et al 2006 Semicond. Sci. Technol. 21 1064 doi:10.1088/0268-1242/21/8/014
T K Ko1, S J Chang1, J K Sheu2, S C Shei3, Y Z Chiou4, M L Lee5, C F Shen1, S P Chang1 and K W Lin4
Show affiliationsAl0.2Ga0.8N/GaN Schottky-barrier ultraviolet (UV)-B bandpass photodetectors (PDs) with indium–tin–oxide (ITO) contact on low-temperature (LT)-GaN cap layers were fabricated and characterized. It was found that dark currents of our PDs were low due to the highly resistive LT GaN cap layers. It was also found that we can realize UV-B PDs with different bandwidths by controlling thickness and annealing conditions. The detectivity, D*, of the PDs with ITO contacts was also larger than the conventional PDs with Ni/Au contacts.
85.30.Hi Surface barrier, boundary, and point contact devices
85.30.De Semiconductor-device characterization, design, and modeling
73.50.Pz Photoconduction and photovoltaic effects
68.55.-a Thin film structure and morphology
85.60.Gz Photodetectors (including infrared and CCD detectors)
Issue 8 (August 2006)
Received 30 March 2006, in final form 4 June 2006
Published 28 June 2006
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