Guoqiang Li et al 2006 Semicond. Sci. Technol. 21 1026 doi:10.1088/0268-1242/21/8/007
Growth temperature dependence of structural properties for single crystalline GaN films on MgAl2O4 substrates by pulsed laser deposition
Guoqiang Li1, Jitsuo Ohta1,2, Atsushi Kobayashi1 and Hiroshi Fujioka1,2
Show affiliationsEpitaxial growth of GaN films on MgAl2O4(1 1 1) substrates by pulsed laser deposition (PLD) at temperatures ranging from 973 K to room temperature (RT) has been carried out in this work. It is found that the thickness of the interfacial layer between GaN and MgAl2O4 decreases with a decrease of growth temperature and the interfacial reaction is completely suppressed in the case of RT growth. The epitaxial relationship between GaN and MgAl2O4 is GaN(0 0 0 1)//MgAl2O4(1 1 1) and GaN [1 1 
0]//MgAl2O4[0 
1] at all temperatures. The crystal quality of the as-grown GaN changes with the growth temperature and the RT-grown GaN shows the best quality with FWHM values of 0.21° for the tilt distribution and 0.37° for the twist distribution, respectively. Only the growth of GaN at RT can completely suppress the diffusion of Mg from the substrate to the GaN film. These results evidently demonstrate the advantages of RT growth of GaN on MgAl2O4 substrates by PLD.
- PACS
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68.55.-a Thin film structure and morphology
68.55.A- Nucleation and growth
- Subjects
- Dates
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Issue 8 (August 2006)
Received 25 April 2006, in final form 30 May 2006
Published 20 June 2006
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Growth temperature dependence of structural properties for single crystalline GaN films on MgAl2O4 substrates by pulsed laser deposition
Guoqiang Li et al 2006 Semicond. Sci. Technol. 21 1026
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