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Semiconductor Science and Technology Volume 21 Number 8 Create an alert RSS this journal

C Mejri et al 2006 Semicond. Sci. Technol. 21 1018 doi:10.1088/0268-1242/21/8/005

The effect of AlAs submonolayer insertion on the oscillator strength of excitons in GaAs/AlGaAs quantum wells

C Mejri1, M Chaouache2, M Maaref1, P Voisin3 and J M Gerard4

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Abstract References Cited By

Non-conventional GaAs/GaAlAs structures, with an AlAs monolayer inserted at different positions in wells, have been investigated to observe the behaviour of excitons in quantum wells. The energy and the oscillator strength for different transitions are calculated as a function of the probe position. The differential reflectivity of the spectrum for some samples is measured in order to test our theoretical simulations. We confirmed the observation of certain parity-forbidden transitions only in the most asymmetric samples.


PACS

73.21.Fg Quantum wells

73.61.Ey III-V semiconductors

78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

78.67.De Quantum wells

71.35.-y Excitons and related phenomena

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Nanoscale science and low-D systems

Dates

Issue 8 (August 2006)

Received 28 April 2006, in final form 30 May 2006

Published 20 June 2006



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