Dong-Hai Huang et al 2006 Semicond. Sci. Technol. 21 781 doi:10.1088/0268-1242/21/6/012
Dong-Hai Huang1, Wei-Chou Hsu1, Yu-Shyan Lin2, Yue-Huei Wu3, Rong-Tay Hsu3, Juin-Chin Huang1 and Yin-Kai Liao1
Show affiliationsInP-based InAlAs/InxGa1−xAs/InP high-electron-mobility transistors (HEMTs) with a symmetrically graded channel (SGC-HEMT) and an inversely graded channel (IGC-HEMT) were fabricated and studied. The SGC-HEMT exhibits better Hall, dc and RF characteristics than the IGC-HEMT because there are more electrons accumulated in the symmetrically graded channel. However, the IGC-HEMT has better thermal stability than the SGC-HEMT because the former has higher bandgap discontinuity at the channel/buffer heterojunction and less Coulomb scattering from a δ-doped layer. Furthermore, the IGC-HEMT sustains larger output power than the SGC-HEMT attributed to better breakdown characteristics. Therefore, HEMTs with the symmetrically graded and an inversely graded channel are suitable for high-speed and high-power applications, respectively.
85.30.De Semiconductor-device characterization, design, and modeling
Issue 6 (June 2006)
Received 7 December 2005, in final form 17 March 2006
Published 21 April 2006
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