Yanqiu Lv et al 2006 Semicond. Sci. Technol. 21 771 doi:10.1088/0268-1242/21/6/010
Yanqiu Lv1,2, Nili Wang1, Chunquan Zhuang1,2, Ping Li1,2, Bing Han1,2 and Haimei Gong1
Show affiliationsCarrier lifetime maps and distributions of doped n-InGaAs in a MBE-grown p-InP/n-InGaAs/n-InP double heterostructure (DH) were measured at 300 K and 85 K using the μ-PCD lifetime screening technique. The theoretical considerations required in this technique are discussed in detail. The average carrier lifetimes are 168.2 ns and 149.4 ns at 300 K and 85 K, respectively. The results are consistent with those of ZnS/n-InGaAs/n-InP DHs. InGaAs lifetime mapping of the InP/InGaAs/InP DH is easily obtained without destruction by μ-PCD carrier lifetime measurement. Therefore, it could be a potential method to characterize the uniformity of the wafers, which is necessary to fabricate InGaAs focal plane arrays (FPAs).
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
Issue 6 (June 2006)
Received 28 November 2005, in final form 12 March 2006
Published 19 April 2006
Yanqiu Lv et al 2006 Semicond. Sci. Technol. 21 771
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