C E Martinez et al 2006 Semicond. Sci. Technol. 21 1580 doi:10.1088/0268-1242/21/12/013
C E Martinez1, N M Stanton1, A J Kent1, M L Williams2, I Harrison2, H Tang3, J B Webb3 and J A Bardwell3
Show affiliationsWe report measurements of the energy loss rates and scattering times for two-dimensional electrons in a series of AlGaN/GaN heterostructures grown on different substrate materials. It was found that the device grown on a substrate having the largest lattice mismatch to GaN was within the dirty limit where strong carrier scattering gives rise to an enhanced energy loss rate, which is proportional to T4e at low electron temperatures, Te < 10 K. This is consistent with the measurements of the scattering times and shows that strong scattering by impurities and defects can play an important role in the energy relaxation of some GaN-based devices at low temperatures.
72.20.Ht High-field and nonlinear effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
Issue 12 (December 2006)
Received 15 June 2006, in final form 4 September 2006
Published 29 September 2006
C E Martinez et al 2006 Semicond. Sci. Technol. 21 1580
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