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An investigation of annealing on the dielectric performance of TiO2 thin films

Author

Wenli Yang , Joseph Marino , Alexander Monson and Colin A Wolden

Affiliations

Department of Chemical Engineering, Colorado School of Mines, Golden, CO 80401, USA

Journal

Semiconductor Science and Technology Create an alert RSS this journal

Issue

Volume 21, Number 12

Citation

Wenli Yang et al 2006 Semicond. Sci. Technol. 21 1573

doi: 10.1088/0268-1242/21/12/012


Article References Cited By
 
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Abstract

The impact of annealing on the dielectric performance of TiO2 thin films synthesized by PECVD was investigated. Films annealed between 500 and 700 °C have an anatase crystal structure, while 800 °C annealed films display the rutile phase. The optimal annealing temperature was 600 °C, which both maximized the dielectric constant and minimized the leakage current density. The intrinsic dielectric constant of TiO2 improved from 82 ± 10 in as-deposited films to 168 ± 30 after annealing. The leakage current of optimized films was superior to the SiO2 control samples over a range of equivalent oxide thickness. Fowler–Nordheim tunnelling and Frenkel–Poole conduction were observed in the optimized films, while Schottky emission dominated leakage current at other conditions.

 
PACS

81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

77.55.+f Dielectric thin films

68.55.-a Thin film structure and morphology

73.50.Fq High-field and nonlinear effects

77.22.Ch Permittivity (dielectric function)

Subjects

Condensed matter: electrical, magnetic and optical

Surfaces, interfaces and thin films

Condensed matter: structural, mechanical & thermal

Dates

Issue 12 (December 2006)

Received 13 June 2006 , in final form 28 August 2006

Published 29 September 2006



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