Wenli Yang et al 2006 Semicond. Sci. Technol. 21 1573 doi:10.1088/0268-1242/21/12/012
Wenli Yang, Joseph Marino, Alexander Monson and Colin A Wolden
Show affiliationsThe impact of annealing on the dielectric performance of TiO2 thin films synthesized by PECVD was investigated. Films annealed between 500 and 700 °C have an anatase crystal structure, while 800 °C annealed films display the rutile phase. The optimal annealing temperature was 600 °C, which both maximized the dielectric constant and minimized the leakage current density. The intrinsic dielectric constant of TiO2 improved from 82 ± 10 in as-deposited films to 168 ± 30 after annealing. The leakage current of optimized films was superior to the SiO2 control samples over a range of equivalent oxide thickness. Fowler–Nordheim tunnelling and Frenkel–Poole conduction were observed in the optimized films, while Schottky emission dominated leakage current at other conditions.
77.55.+f Dielectric thin films
68.55.-a Thin film structure and morphology
Condensed matter: electrical, magnetic and optical
Issue 12 (December 2006)
Received 13 June 2006, in final form 28 August 2006
Published 29 September 2006
Wenli Yang et al 2006 Semicond. Sci. Technol. 21 1573
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