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Proton irradiation-induced intermixing in InxGa1−xAs/InP quantum wells—the effect of In composition

P L Gareso1, M Buda1, L Fu1, H H Tan1, C Jagadish1, L V Dao2, X Wen2 and P Hannaford2

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We have investigated atomic intermixing in InxGa1−xAs/InP quantum well (QW) structures induced by proton irradiation using photoluminescence (PL) and time-resolved photoluminescence. Photoluminescence results revealed that energy shift was systematically decreased as irradiation temperature was increased, followed by a broadening of the PL linewidth and reduction of the PL intensity. Time-resolved photoluminescence results at room temperature showed that the capture time of carriers in the quantum well region which reflects in the rise time of PL intensity is different for various quantum well structures with different strain and the carrier collection efficiency enhanced in the intermixed QWs. The time evolution of PL intensity also indicates that intermixing changes the strain profile of three QWs.


PACS

61.80.Jh Ion radiation effects

78.55.Cr III-V semiconductors

61.72.Cc Kinetics of defect formation and annealing

68.65.Fg Quantum wells

68.35.Fx Diffusion; interface formation

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Nanoscale science and low-D systems

Condensed matter: structural, mechanical & thermal

Dates

Issue 10 (October 2006)

Received 31 May 2006, in final form 1 August 2006

Published 5 September 2006



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