P L Gareso et al 2006 Semicond. Sci. Technol. 21 1441 doi:10.1088/0268-1242/21/10/013
P L Gareso1, M Buda1, L Fu1, H H Tan1, C Jagadish1, L V Dao2, X Wen2 and P Hannaford2
Show affiliationsWe have investigated atomic intermixing in InxGa1−xAs/InP quantum well (QW) structures induced by proton irradiation using photoluminescence (PL) and time-resolved photoluminescence. Photoluminescence results revealed that energy shift was systematically decreased as irradiation temperature was increased, followed by a broadening of the PL linewidth and reduction of the PL intensity. Time-resolved photoluminescence results at room temperature showed that the capture time of carriers in the quantum well region which reflects in the rise time of PL intensity is different for various quantum well structures with different strain and the carrier collection efficiency enhanced in the intermixed QWs. The time evolution of PL intensity also indicates that intermixing changes the strain profile of three QWs.
61.80.Jh Ion radiation effects
Condensed matter: electrical, magnetic and optical
Surfaces, interfaces and thin films
Issue 10 (October 2006)
Received 31 May 2006, in final form 1 August 2006
Published 5 September 2006
P L Gareso et al 2006 Semicond. Sci. Technol. 21 1441