Semiconductor Science and Technology
Volume 20
Number 5
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G Nicholas et al 2005 Semicond. Sci. Technol. 20 L20 doi:10.1088/0268-1242/20/5/L02
Investigation of the injection velocity of holes in strained Si pMOSFETs
FREE ARTICLEG Nicholas1, T J Grasby1, E H C Parker1, T E Whall1, D J Paul2, A G R Evans3 and H von Känel4
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Temple M P, Paul D J, Tang Y T, Waite A M, Cerrina C, Evans A G R, Grasby T J, Parker E H C, von Känel H and O'Neill A G 2005 Enhanced p-MOSFET performance using strained-Si on SiGe virtual substrates grown by low energy plasma enhanced chemical vapour deposition IEEE Trans. Electron Devices submitted
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Investigation of the injection velocity of holes in strained Si pMOSFETs
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