G Nicholas et al 2005 Semicond. Sci. Technol. 20 L20 doi:10.1088/0268-1242/20/5/L02
G Nicholas1, T J Grasby1, E H C Parker1, T E Whall1, D J Paul2, A G R Evans3 and H von Känel4
Show affiliationsUsing a pulsed measurement system, the drain current in a high mobility strained Si pMOSFET was extracted in the absence of self-heating. This was used to demonstrate that the injection velocity of holes from the source is well below the thermal limit for biaxial tensile strained Si pMOSFETs down to 0.1 µm channel length.
85.30.De Semiconductor-device characterization, design, and modeling
Issue 5 (May 2005)
Received 30 November 2004, in final form 15 February 2005
Published 4 March 2005
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