D Pastor et al 2005 Semicond. Sci. Technol. 20 374 doi:10.1088/0268-1242/20/5/009
D Pastor1, R Cuscó1, L Artús1, G González-Díaz2, S Fernández3 and E Calleja3
Show affiliationsWe present Raman scattering measurements on Be+-implanted samples showing that implantation damage is substantially reduced when the substrate temperature is raised to ≈400 °C during the implantation. We study two sets of samples implanted with 150 keV Be+ to doses between 1 × 1013 and 5 × 1015 cm−2 at room temperature and at 400 °C, respectively. Whereas the GaN epilayers implanted at room temperature show a rapid increase of lattice damage with Be+ dose, the damage buildup is more gradual and the degree of lattice disorder in the damaged layer is significantly lower for the epilayers implanted at 400 °C. These results are confirmed by x-ray measurements carried out on these samples.
61.72.uj III–V and II–VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
Condensed matter: electrical, magnetic and optical
Issue 5 (May 2005)
Received 17 November 2004, in final form 13 January 2005
Published 28 February 2005
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