C C McAndrew et al 1987 Semicond. Sci. Technol. 2 643 doi:10.1088/0268-1242/2/10/003
C C McAndrew, E L Heasell and K Singhal
Show affiliationsIn this paper a comprehensive carrier dynamical transport model for semiconductor device simulation is presented. The model consists of carrier, carrier momentum and carrier energy conservation relations derived using a perturbation solution for the carrier distribution function. Carrier degeneracy, multiple conduction sub-bands and ellipsoidal constant energy surfaces are accounted for, and the effective masses and band edges are assumed to be spatially inhomogeneous. The new formulation overcomes modelling inaccuracies of previous energy transport models based on a drifted Maxwellian distribution function, and for spatially homogeneous, non-degenerate semiconductors offers several computational advantages.
85.30.De Semiconductor-device characterization, design, and modeling
72.20.Fr Low-field transport and mobility; piezoresistance
72.10.-d Theory of electronic transport; scattering mechanisms
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
Issue 10 (October 1987)
C C McAndrew et al 1987 Semicond. Sci. Technol. 2 643
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