R S Balmer et al 2004 Semicond. Sci. Technol. 19 L65 doi:10.1088/0268-1242/19/6/L02
R S Balmer1, K P Hilton1, K J Nash1, M J Uren1, D J Wallis1, D Lee1, A Wells2, M Missous2 and T Martin1
Show affiliationsWe present a study of the effect of the growth of a thin AlN exclusion layer between the AlGaN barrier layer and GaN buffer layer in microwave heterojunction field-effect transistor structures. A dramatic improvement in carrier drift mobility is observed and we present evidence from electronic structure calculations and capacitance–voltage experiments that this improvement is associated with reduced alloy scattering. However, no significant benefit is seen at low carrier concentrations. Reduced electron trapping in the AlGaN is an additional benefit.
71.20.Nr Semiconductor compounds
68.55.A- Nucleation and growth
72.20.Fr Low-field transport and mobility; piezoresistance
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
Issue 6 (June 2004)
Received 8 December 2003
Published 21 April 2004
R S Balmer et al 2004 Semicond. Sci. Technol. 19 L65
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