Semiconductor Science and Technology
Volume 19
Number 6
Create an alert
RSS this journal
Bo Liu et al 2004 Semicond. Sci. Technol. 19 L61 doi:10.1088/0268-1242/19/6/L01
Nitrogen-implanted Ge2Sb2Te5 film used as multilevel storage media for phase change random access memory
FREE ARTICLEBo Liu1, Ting Zhang1, Jilin Xia1, Zhitang Song1,2, Songlin Feng2 and Bomy Chen3
Show affiliations- [1]
-
Multi-State Data Storage of Ge2Sb2Te5∕Ga30Sb70 Multilayer Films for Phase Change Memory
Mingcheng Sun et al Electrochemical and Solid-State Letters 2012 15 H115
CrossRef - [2]
-
Properties of Phase Change Materials Modified by Ion Implantation
Simone Raoux et al MRS Proceedings 2011 1338 mrss11-1338-r05-06
CrossRef - [3]
-
N-doped Sb2Te phase change materials for higher data retention
Min Zhu et al Journal of Alloys and Compounds 2011
CrossRef - [4]
-
Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state
Xilin Zhou et al Applied Physics Letters 2011 99 032105
CrossRef - [5]
-
Ga[sub 2]Te[sub 3] phase change material for low-power phase change memory application
Hao Zhu et al Applied Physics Letters 2010 97 083504
CrossRef - [6]
-
Performance improvement of phase change memory cell by using a cerium dioxide buffer layer
Fei Shang et al Applied Physics Letters 2010 96 203504
CrossRef - [7]
-
Ge2Sb2Te5 Phase Change Memory Cell Featuring Platinum Tapered Heating Electrode For Low-Voltage Operation
Shilong Lv et al Japanese Journal of Applied Physics 2010 49 026503
CrossRef - [8]
-
Binary semiconductor In2Te3 for the application of phase-change memory device
Hao Zhu et al Journal of Materials Science 2010
CrossRef - [9]
-
H.-S. Philip Wong et al
Proceedings of the IEEE
2010
98
2201
CrossRef - [10]
-
Improved Performance of Phase Change Memory Cell with Strontium Titanate and Barium Titanate Buffer Layer
Fei Shang et al Japanese Journal of Applied Physics 2010 49 094202
CrossRef - [11]
-
Three-Dimensional Finite Element Analysis of Phase Change Memory Cell with Thin TiO2 Film
Liu Yan et al Chinese Physics Letters 2010 27 038502
IOPscience - [12]
-
Si2Sb2Te6 Phase Change Material for Low-Power Phase Change Memory Application
Xilin Zhou et al Applied Physics Express 2009 2 091401
CrossRef - [13]
-
Ga2Te3Sb5-A Candidate for Fast and Ultralong Retention Phase-Change Memory
Kin-Fu Kao et al Advanced Materials 2009 NA
CrossRef - [14]
-
EVALUATION OF DIFFERENT METALORGANIC PRECURSORS FOR Ge-Sb-Te THIN FILM DEPOSITION
DENIS RESO et al Integrated Ferroelectrics 2009 110 87
CrossRef - [15]
-
Performance improvement of phase-change memory cell with cup-shaped bottom electrode contact
W. L. Liu et al Applied Physics Letters 2008 93 103107
CrossRef - [16]
-
Effect of Nitrogen Implantation with Low Dose on Thermomechanical Properties and Microstructure of Ge2Sb2Te5 Films
Yong Tae Kim et al Japanese Journal of Applied Physics 2008 47 1491
CrossRef - [17]
-
Lower current operation of phase change memory cell with a thin TiO[sub 2] layer
Songlin Feng et al Applied Physics Letters 2008 92 062103
CrossRef - [18]
-
Characterization of RF magnetron sputtered Se-doped Ge2Sb2.3Te5 thin films
Tomas Wagner et al MRS Proceedings 2008 1072 1072-G05-07
CrossRef - [19]
-
Investigation of environmental friendly Te-free SiSb material for applications of phase-change memory
Ting Zhang et al Semiconductor Science and Technology 2008 23 055010
IOPscience - [20]
-
Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor
Xu Cheng et al Chinese Physics Letters 2008 25 1848
IOPscience - [21]
-
High Speed and Ultra-Low-Power Phase Change Line Cell Memory Based on SiSb Thin Films with Nanoscale Gap of Electrodes Less Than 100 nm
Lv Shi-Long et al Chinese Physics Letters 2008 25 4174
IOPscience - [22]
-
Germanium Nitride Interfacial Layer for Chalcogenide Random Access Memory Applications
Songlin Feng et al Applied Physics Express 2007 1 011201
CrossRef - [23]
-
Investigation of Compositional Gradient Phase Change SixSb2Te3 Thin Films
Songlin Feng et al Japanese Journal of Applied Physics 2007 46 L70
CrossRef - [24]
-
Multilevel Data Storage Characteristics of Phase Change Memory Cell with Doublelayer Chalcogenide Films (Ge2Sb2Te5 and Sb2Te3)
Songlin Feng et al Japanese Journal of Applied Physics 2007 46 L25
CrossRef - [25]
-
Set and Reset Properties of Phase Change Memory Cells with Double-Layer Chalcogenide Films (Ge[sub 2]Sb[sub 2]Te[sub 5] and Sb[sub 2]Te[sub 3])
Songlin Feng et al Journal of The Electrochemical Society 2007 154 H999
CrossRef - [26]
-
Investigation on the stabilization of the median resistance state for phase change memory cell with doublelayer chalcogenide films
Songlin Feng et al Applied Physics Letters 2007 91 123511
CrossRef - [27]
-
Phase change memory cell with an upper amorphous nitride silicon germanium heating layer
Songlin Feng et al Applied Physics Letters 2007 91 073505
CrossRef - [28]
-
Si1Sb2Te3 phase change material for chalcogenide random access memory
Zhang Ting et al Chinese Physics 2007 16 2475
IOPscience - [29]
-
Remarkable Resistance Change in Plasma Oxidized TiOx/TiNx Film for Memory Application
Wu Liang-Cai et al Chinese Physics Letters 2007 24 1103
IOPscience - [30]
-
Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode
Liu Bo et al Chinese Physics Letters 2007 24 262
IOPscience - [31]
-
Reversible Resistance Switching of GeTi Thin Film Used for Non-Volatile Memory
Songlin Feng et al Japanese Journal of Applied Physics 2006 46 L1
CrossRef - [32]
-
Crystallization and C-RAM application of Ag-doped Sb2Te3 material
Jiaqing Xu et al Materials Science and Engineering B 2006 127 228
CrossRef - [33]
-
Multiple-State Storage Capability of Stacked Chalcogenide Films (Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50) for Phase Change Memory
Lai Yun-Feng et al Chinese Physics Letters 2006 23 2516
IOPscience - [34]
-
Effect of N-implantation on the structural and electrical characteristics of Ge2Sb2Te5 phase change film
Bo Liu et al Thin Solid Films 2005 478 49
CrossRef - [35]
-
Structure and sheet resistance of boron-implanted Ge2Sb2Te5 phase change film
Bo Liu et al Materials Science and Engineering B 2005 119 125
CrossRef - [36]
-
Wet etching of Ge2Sb2Te5 films and switching properties of resultant phase change memory cells
Huai-Yu Cheng et al Semiconductor Science and Technology 2005 20 1111
IOPscience - [37]
-
Electrical Properties of Ag-Doped Ge2Sb2Te5 Films Used for Phase Change Random Access Memory
Xia Ji-Lin et al Chinese Physics Letters 2005 22 934
IOPscience - [38]
-
Reversible Phase Change for C-RAM Nano-Cell-Element Fabricated by Focused Ion Beam Method
Liu Bo et al Chinese Physics Letters 2005 22 758
IOPscience - [39]
-
Single Cell Element of Chalcogenide Random Access Memory Fabricated with the Focused Ion Beam Method
Liu Bo et al Chinese Physics Letters 2004 21 2054
IOPscience
-
Nitrogen-implanted Ge2Sb2Te5 film used as multilevel storage media for phase change random access memory
Bo Liu et al 2004 Semicond. Sci. Technol. 19 L61
-
Magnetic Relaxation in the Solar Corona
Kenneth Miller et al. 2009 ApJ 690 720
-
Spitzer Mid-Infrared Spectroscopy of Infrared Luminous Galaxies at z~2. II. Diagnostics
Anna Sajina et al. 2007 ApJ 664 713
-
Optical Spectroscopy of Distant Red Galaxies
Stijn Wuyts et al. 2009 ApJ 706 885
-
Comparison of pressure standards in the range 10 kPa to 140 kPa
M Perkin et al 1999 Metrologia 36 160
-
An Exceptional Very High Energy Gamma-Ray Flare of PKS 2155–304
F. Aharonian et al 2007 ApJ 664 L71
-
Performance aspects of gas-operated pressure balances as pressure standards
C M Sutton and M P Fitzgerald 2009 Metrologia 46 655
-
Magnetoconvection in a Sunspot Umbra
M. Schüssler and A. Vögler 2006 ApJ 641 L73
-
A Search for Molecular Gas in GHz-peaked Spectrum Radio Sources
Christopher P. O'Dea et al. 2005 The Astronomical Journal 129 610
-
An atomic coilgun: using pulsed magnetic fields to slow a supersonic beam
E Narevicius et al 2007 New J. Phys. 9 358
Users also read
What's this?This innovative new feature generates a list of articles 'also read' by other users based on them reading the original article. Article abstracts citations and references are all considered and weighted accordingly. We hope that this will help you find relevant papers for your research.
- Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance
- Structure and Electrical Properties of Ge2Sb2Te5 Thin Film Used for Ovonic Unified Memory
- Effect of Annealing Temperature on the Microstructure and Resistivity of Ge2Sb2Te5 Films
Related review articles
What's this? View review articles related to this research to gain an insight into the key trends in this subject area. Related review articles are selected based on PACS/MSC codes, and are no more than three years old.
- Ge-on-Si films obtained by epitaxial growing: edge dislocations and their participation in plastic relaxation
- The structural analysis possibilities of reflection high energy electron diffraction
- Molecular dewetting on insulators