Michael B Johnston et al 2004 Semicond. Sci. Technol. 19 S449 doi:10.1088/0268-1242/19/4/147
Michael B Johnston1, Annette Dowd2,5, Robert Driver2, Edmund H Linfield2, A Giles Davies3 and David M Whittaker4
Show affiliationsIt is shown experimentally that surface-field terahertz (THz) emitters can produce well-collimated beams of THz radiation, making them useful devices for time-domain spectroscopy applications. Simulations of the carrier-dynamics are used to explain the mechanism of THz generation in InAs and GaAs, and it is shown that inter-valley scattering of electrons must be considered in order to fully describe THz emission from InAs.
79.70.+q Field emission, ionization, evaporation, and desorption
Issue 4 (April 2004)
Received 28 July 2003
Published 15 March 2004
Michael B Johnston et al 2004 Semicond. Sci. Technol. 19 S449
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