Quick search Find article
Quick search
Find article

Quantum interference injection and control of spin-polarized transient current gratings in GaAs

H M van Driel1, Y Kerachian1, P Nemec1 and Arthur L Smirl2

Show affiliations


We demonstrate the creation of a transient spin-polarized current grating in bulk GaAs at room temperature. The spin current is injected through quantum interference between two-photon absorption of fundamental (1.55 µm) and one-photon absorption of second harmonic (775 nm) pulses. Because the fundamental and second harmonic pulses do not propagate collinearly, a spin current grating is formed, which decays by electron diffusion.


PACS

72.25.Dc Spin polarized transport in semiconductors

73.23.Ad Ballistic transport

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Dates

Issue 4 (April 2004)

Received 28 July 2003

Published 8 March 2004



Related review articles

What's this?
View review articles related to this research to gain an insight into the key trends in this subject area. Related review articles are selected based on PACS/MSC codes, and are no more than three years old.

  1. Electron-spin motion: a new tool to study ferromagnetic films and surfaces
  2. Tunneling path toward spintronics
  3. Spintronics: exchange switching of ferromagnetic metallic junctions at a low current density
More

View by subject




Export






Please login to access our web services, or create an account if you don't yet have one.

You must have cookies enabled in your web browser to be able to login.

Username
Password

Forgotten your password? Get a new one here.