A Buß et al 2004 Semicond. Sci. Technol. 19 S40 doi:10.1088/0268-1242/19/4/015
A Buß1, G Nachtwei1, N G Kalugin1, B E Sağol1, C Stellmach1, A Hirsch1 and G Hein2
Show affiliationsQuantum Hall systems can show a bistability in the hysteresis of the breakdown. We realized a relaxation oscillator based on a quantum-Hall device with Corbino geometry. Investigations of the performance of such an oscillator revealed an increase of the hysteresis of the current–voltage curve of the device in comparison with the width of hysteresis at dc voltages. By direct measurements of the hysteresis of the current–voltage curve at different frequencies, we found a marked increase of the breakdown hysteresis at low frequencies of some Hz. We explain the observed dynamical enhancement of the breakdown hysteresis applying an electron heating model with a background (delocalization-related) component of conductivity, which decreases with increasing frequency, indicating a more effective localization already at low frequencies.
85.30.De Semiconductor-device characterization, design, and modeling
84.30.Ng Oscillators, pulse generators, and function generators
Issue 4 (April 2004)
Received 28 July 2003
Published 27 February 2004
A Buß et al 2004 Semicond. Sci. Technol. 19 S40
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