S V Novikov et al 2004 Semicond. Sci. Technol. 19 L13 doi:10.1088/0268-1242/19/3/L02
S V Novikov1, K W Edmonds, A D Giddings, K Y Wang, C R Staddon, R P Campion, B L Gallagher and C T Foxon
Show affiliationsCubic (zinc-blende) Ga1−xMnxN layers were grown by plasma-assisted molecular beam epitaxy on GaAs (001) substrates. Some of the structures also contained cubic AlN buffer layers. Auger electron spectroscopy and secondary ion mass spectroscopy studies clearly confirmed the incorporation of Mn into cubic GaN, the Mn being uniformly distributed through the layer. X-ray diffraction studies demonstrated that the Mn-doped GaN films are cubic and do not show phase separation up to a Mn concentration of x < 0.1. p-type conductivity for the cubic Ga1−xMnxN layers was observed for a wide range of the Mn doping levels. The measured hole concentration at room temperature depends nonlinearly on the Mn incorporation and varies from 3 × 1016 to 5 × 1018 cm−3.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.55.-a Thin film structure and morphology
75.70.Ak Magnetic properties of monolayers and thin films
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
Issue 3 (March 2004)
Received 5 November 2003
Published 21 November 2003
S V Novikov et al 2004 Semicond. Sci. Technol. 19 L13
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