I P Soshnikov et al 2004 Semicond. Sci. Technol. 19 501 doi:10.1088/0268-1242/19/3/038
I P Soshnikov1, A R Kovsh1, V M Ustinov1, N V Kryzhanovskaya1, N N Ledentsov2, D Bimberg2, H Kirmse3, W Neumann3, O M Gorbenko4, G Lin5, J Wang5, R S Shiao5 and J Chi5
Show affiliationsIn this work we studied the impact of the growth mode on structural and optical properties of thick GaAsN layers grown on GaAs (100) substrates using plasma-source molecular beam epitaxy. The investigated GaAsN layers had similar average nitrogen content (N ~ 1.4–1.6%), but were formed using different growth approaches. We found that both structural and optical properties of GaAsN layers crucially depend on the growth mode. We observed the formation of an ultrashort-period monolayer GaAsN–GaAs superlattice upon pulsed GaAsN deposition with laterally modulated nitrogen composition. We attribute this phenomenon to self-organization of nitrogen-rich and nitrogen-poor domains due to phase separation. We demonstrate the possibility of forming short-period GaAsN/GaAs superlattices using multi-cycle GaAsN deposition in order to fabricate high planarity lateral domain structures suitable for fundamental research and practical applications.
68.55.A- Nucleation and growth
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
Soft matter, liquids and polymers
Issue 3 (March 2004)
Received 10 October 2003
Published 2 February 2004
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