B Aslan et al 2004 Semicond. Sci. Technol. 19 399 doi:10.1088/0268-1242/19/3/018
B Aslan1,2, R Turan1, H C Liu2 and J-M Baribeau2
Show affiliationsWe study the mechanisms of photocurrent generation in the SiGe/Si heterojunction internal photoemission (HIP) infrared photodetectors and present a qualitative model. It has been shown that the performance of our devices depends significantly on the applied bias and the operating temperature. The device presented here allows us to tune the cut-off wavelength between 28.3 µm and 17.8 µm by changing the potential difference across the device.
85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
Condensed matter: electrical, magnetic and optical
Issue 3 (March 2004)
Received 11 September 2003, in final form 12 November 2003
Published 23 December 2003
B Aslan et al 2004 Semicond. Sci. Technol. 19 399
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