Y K Su et al 2004 Semicond. Sci. Technol. 19 389 doi:10.1088/0268-1242/19/3/016
Y K Su1, S J Chang1, L W Ji1, C S Chang1, L W Wu1, W C Lai1, T H Fang2 and K T Lam3
Show affiliationsInGaN/GaN blue light-emitting diodes (LEDs) with multiple quantum dot (MQD) active layers were successfully fabricated by using an interrupted growth method in metal-organic chemical vapour deposition (MOCVD). We have successfully formed nanoscale QDs embedded in quantum wells with a typical 3 nm height and 10 nm lateral dimension. It was found that a huge 68.4 meV blue shift in electroluminescence (EL) peak position as the injection current is increased from 3 to 50 mA for the MQD LED. The large EL blue shift reveals that deep localization of exitons (or carriers) originates from QDs will strengthen the band-filling effect as the injection current increases.
85.60.Jb Light-emitting devices
68.65.Hb Quantum dots (patterned in quantum wells)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
Surfaces, interfaces and thin films
Issue 3 (March 2004)
Received 29 August 2003
Published 23 December 2003
Y K Su et al 2004 Semicond. Sci. Technol. 19 389
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E Ben-Naim and P L Krapivsky 2006 J. Phys. A: Math. Gen. 39 L301
Grant R. Tremblay et al. 2009 ApJS 183 278
E. Ben-Naim et al 2007 EPL 77 30005
E Ben-Naim and P L Krapivsky 2007 J. Phys. A: Math. Theor. 40 8607
Steve B Jiang et al 2003 Phys. Med. Biol. 48 1773
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