S J Pearton et al 2004 Semicond. Sci. Technol. 19 R59 doi:10.1088/0268-1242/19/10/R01
Dilute magnetic semiconducting oxides
REVIEW ARTICLES J Pearton1, W H Heo1, M Ivill1, D P Norton1 and T Steiner2
Show affiliationsTOPICAL REVIEW
A review of recent results on transition metal doping of electronic oxides such as ZnO, TiO2, SnO2, BaTiO3, Cu2O, SrTiO3 and KTaO3 is presented. There is interest in achieving ferromagnetism with Curie temperatures above room temperature in such materials for applications in the field of spintronic devices, in which the spin of the carriers is exploited. The incorporation of several atomic per cent of the transition metals without creation of second phases appears possible under optimized synthesis conditions, leading to ferromagnetism. Pulsed laser deposition, reactive sputtering, molecular beam epitaxy and ion implantation have all been used to produce the oxide-based dilute magnetic materials. The mechanism is still under debate, with carrier-induced, double-exchange and bound magnetic polaron formation all potentially playing a role depending on the conductivity type and level in the material.
- PACS
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75.50.Pp Magnetic semiconductors
75.50.Cc Other ferromagnetic metals and alloys
75.30.Et Exchange and superexchange interactions
61.72.uj III–V and II–VI semiconductors
75.30.Kz Magnetic phase boundaries (including magnetic transitions, metamagnetism, etc.)
- Subjects
- Dates
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Issue 10 (October 2004)
Received 14 July 2004
Published 26 August 2004
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Dilute magnetic semiconducting oxides
S J Pearton et al 2004 Semicond. Sci. Technol. 19 R59
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