J E Butler et al 2003 Semicond. Sci. Technol. 18 S67 doi:10.1088/0268-1242/18/3/309
J E Butler1, M W Geis2, K E Krohn2, J Lawless Jr2, S Deneault2, T M Lyszczarz2, D Flechtner3 and R Wright3
Show affiliationsExceptionally pure epitaxial diamond layers have been grown by microwave plasma chemical vapour deposition, which have low boron doping, from 5 × 1014 to 1 × 1016 cm−3, and the compensating n-type impurities are the lowest reported for any semiconducting diamond, <3 × 1013 cm−3. The hydrogen impurities that bind with the boron making them electrically inactive can be significantly reduced by baking the diamond to >700 °C for ~1 s in air. Schottky diodes made on these epitaxial diamond films have breakdown voltages >6 kV, twelve times the highest breakdown voltage reported for any diamond diode and higher than any other semiconductor Schottky diode.
85.40.Ry Impurity doping, diffusion and ion implantation technology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
85.30.De Semiconductor-device characterization, design, and modeling
Issue 3 (March 2003)
Received 27 February 2002
Published 7 February 2003
J E Butler et al 2003 Semicond. Sci. Technol. 18 S67
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