D Verstraeten et al 2003 Semicond. Sci. Technol. 18 919 doi:10.1088/0268-1242/18/11/303
D Verstraeten1,2, C Longeaud3, A Ben Mahmoud4,5, H J von Bardeleben4, J C Launay2, O Viraphong2 and Ph C Lemaire1
Show affiliationsThe electrical and photoconductive properties of Bridgman grown vanadium–zinc co-doped CdTe bulk crystals are strongly influenced by one native intrinsic defect previously attributed to the Te vacancy. In order to identify this defect and control its formation mechanism, a correlated electron paramagnetic resonance (EPR) and modulated photocurrent (MPC) study has been made. The results obtained allow us to attribute this defect to the TeCd antisite, a double donor. By EPR and MPC its +/2+ level position has been determined to Ec − 0.20 eV. Four other centres of minor concentrations were characterized by MPC in as-grown crystals. From the MPC results the density of states for CdTe:V materials has been determined.
72.80.Ey III-V and II-VI semiconductors
72.40.+w Photoconduction and photovoltaic effects
81.10.Fq Growth from melts; zone melting and refining
76.30.Lh Other ions and impurities
73.20.At Surface states, band structure, electron density of states
Condensed matter: electrical, magnetic and optical
Issue 11 (November 2003)
Received 7 April 2003, in final form 2 July 2003
Published 11 August 2003
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