P R C Kent et al 2002 Semicond. Sci. Technol. 17 851 doi:10.1088/0268-1242/17/8/314
Pseudopotential theory of dilute III–V nitrides
P R C Kent1, L Bellaiche2 and Alex Zunger1
Show affiliationsWe review the empirical pseudopotential method and its recent applications to the III–V nitride alloys GaAsN, GaPN, GaInAsN and GaAsPN. We discuss how studies using this method have provided an explanation for many experimentally observed anomalous nitride phenomena, including sharp photoluminescence lines in dilute alloys, high effective masses, Stoke's shift between emission and absorption in higher concentration alloys for GaAsN and GaPN ternaries. We also discuss predictions of unusual effects that remain to be experimentally discovered in GaInAsN quaternaries and complex GaAsPN solid solutions.
- PACS
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71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
- Subjects
- Dates
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Issue 8 (August 2002)
Received 8 February 2002
Published 12 July 2002
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Pseudopotential theory of dilute III–V nitrides
P R C Kent et al 2002 Semicond. Sci. Technol. 17 851
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