A E Zhukov et al 2001 Semicond. Sci. Technol. 16 413 doi:10.1088/0268-1242/16/5/323
A E Zhukov1, R Zhao2, P Specht2, V M Ustinov1, A Anders3 and E R Weber2
Show affiliations(In)GaAsN epilayers were grown on GaAs substrates by molecular beam epitaxy (MBE) with a DC constricted-plasma source. Nitrogen incorporation efficiency, crystalline quality, surface morphology and luminescent properties of the epilayers were studied and correlated with various operation regimes of the source. The nitrogen incorporation efficiency grows with increasing plasma discharge current. The maximum nitrogen concentration in the epilayer is as high as 3.7 %. GaAsN as thick as 0.35 µm can be pseudomorphically grown on GaAs, and photoluminescence is observed at room temperature. The crystalline quality and surface morphology of an epilayer can also be improved by reducing the ion damage at low plasma discharge current. The DC constricted-plasma source is a promising alternative nitrogen plasma source for investigating InGaAsN materials.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.60.-p Physical properties of thin films, nonelectronic
68.55.A- Nucleation and growth
Condensed matter: electrical, magnetic and optical
Issue 5 (May 2001)
Received 15 December 2000, accepted for publication 29 March 2001
A E Zhukov et al 2001 Semicond. Sci. Technol. 16 413
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