J S Lee et al 2000 Semicond. Sci. Technol. 15 267 doi:10.1088/0268-1242/15/3/307
A novel BaTiO3/SiO2-based voltage-programmable link applicable to on-chip programmable devices
J S Lee
, Y H Bae
and Y H Lee§
A novel voltage-programmable link (VPL) with Al/BaTiO3 /SiO2 /TiW silicide /TiW structure has been developed for programmable device application. A programming cell to evaluate programming behaviour consists of an n-MOSFET and a VPL, which are connected in series. The programming process of the VPL was achieved through the switched n-MOSFET. The amorphous BaTiO3 film, prepared by means of an RF sputtering method, determines the program properties of the VPL owing to its lower breakdown field and metallic components. Sufficient low on resistance less than 10 
and low programming voltage below 10 V can be realized by using BaTiO3 (120 Å)/SiO2 (150 Å) films as insulators while keeping sufficient off-state reliability.
- PACS
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85.30.De Semiconductor-device characterization, design, and modeling
- Subjects
- Dates
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Issue 3 (March 2000)
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A novel BaTiO3/SiO2-based voltage-programmable link applicable to on-chip programmable devices
J S Lee et al 2000 Semicond. Sci. Technol. 15 267
-
In vitro investigation of calcium distribution and tissue thickness in the human thoracic aorta
P J Dunmore-Buyze et al 2002 Physiol. Meas. 23 555
-
Resonantly Enhanced Quantum Decay
F. Großmann and P. Hänggi 1992 Europhys. Lett. 18 1
-
An introduction to methods of periodic poling for second-harmonic generation
M Houe and P D Townsend 1995 J. Phys. D: Appl. Phys. 28 1747
-
Using an optical fibre anemometer to measure the speed of the electric wind in a negative polarity, atmospheric corona discharge
A Hooper and D W Lamb 2005 J. Phys.: Conf. Ser. 15 219
-
The Proton Gamma Angular Correlations in the 28Si(d,pγ)29Si Stripping Reaction
K W Allen et al 1956 Proc. Phys. Soc. A 69 705
-
Topographically modified surfaces affect orientation and growth of hippocampal neurons
N M Dowell-Mesfin et al 2004 J. Neural Eng. 1 78
-
Isothermal annealing of ion-bombardment-induced amorphousness in semiconductors
G Carter 1996 J. Phys. D: Appl. Phys. 29 1619
-
Optical properties and enhancement factors of the tips for apertureless near-field optics
D Mehtani et al 2006 J. Opt. A: Pure Appl. Opt. 8 S183
-
Improvement of the monochromaticity of the output radiation of an HCN laser
S F Dyubko and A N Topkov 1973 Sov. J. Quantum Electron. 3 56
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