U P Singh and P C Srivastava 1998 Semicond. Sci. Technol. 13 1219 doi:10.1088/0268-1242/13/10/027
Hydrogenation studies in p-GaAs
U P Singh and P C Srivastava
Show affiliationsHydrogenation studies in p-GaAs have been performed by fabricating Pd/p-GaAs devices. The devices have been studied by I-V and C-V measurements. Hydrogenation has been found to improve the ideality factor of the diode. The forward C-V characteristics have shown the presence of interfacial deep donors at 
and 
, the density of which decreased on hydrogenation. The content of hydrogen in Pd/p-GaAs has been measured both in the semiconducting substrates and the palladium thin film by ERDA using 55 MeV Si ions.
- PACS
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85.30.De Semiconductor-device characterization, design, and modeling
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
- Subjects
- Dates
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Issue 10 (October 1998)
Received 11 November 1997, accepted for publication 3 June 1998
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Hydrogenation studies in p-GaAs
U P Singh and P C Srivastava 1998 Semicond. Sci. Technol. 13 1219
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