T Deguchi et al 1998 Semicond. Sci. Technol. 13 97 doi:10.1088/0268-1242/13/1/015
T Deguchi
, T Azuhata
, T Sota
, S Chichibu
, M Arita
, H Nakanishi
and S Nakamura§
A systematic study of the optical gain of continuous wave InGaN multiple quantum well laser diode wafers has been made using the variable excitation-stripe length method. Experimental evidence is given of stimulated emission enhanced by resonance between degenerate states and non-degenerate ones, which co-exist in quantum wells having spatial potential undulation due to considerable fluctuation of the InGaN composition.
Issue 1 (January 1998)
Received 26 June 1997, accepted for publication 12 September 1997
T Deguchi et al 1998 Semicond. Sci. Technol. 13 97
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