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Gain spectroscopy of continuous wave InGaN multi-quantum well laser diodes

T Deguchi-+, T Azuhata-+, T Sota-+, S Chichibu++, M Arita++, H Nakanishi++ and S Nakamura§

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A systematic study of the optical gain of continuous wave InGaN multiple quantum well laser diode wafers has been made using the variable excitation-stripe length method. Experimental evidence is given of stimulated emission enhanced by resonance between degenerate states and non-degenerate ones, which co-exist in quantum wells having spatial potential undulation due to considerable fluctuation of the InGaN composition.


PACS

42.55.Px Semiconductor lasers; laser diodes

42.60.By Design of specific laser systems

Subjects

Optics, quantum optics and lasers

Dates

Issue 1 (January 1998)

Received 26 June 1997, accepted for publication 12 September 1997



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