L F Marsal et al 1996 Semicond. Sci. Technol. 11 1209 doi:10.1088/0268-1242/11/8/016
L F Marsal
, J Pallarès
, X Correig
, J Calderer
and R Alcubilla![]()
Current - voltage characteristics of n-type amorphous/p-type crystalline silicon heterojunction diodes were studied as a function of temperature. From the experimental results, a new, physically based, electrical model describing the device's behaviour for forward voltages was developed. The proposed model separates the rectifying behaviour from the bulk effects of the amorphous silicon layer and correctly predicts the forward current - voltage characteristic from low to high biases in the whole range of considered temperatures. The temperature dependence of the different circuit parameters is used to characterize both the current transport mechanisms and some physical characteristics of the amorphous material.
85.30.De Semiconductor-device characterization, design, and modeling
Issue 8 (August 1996)
Received 29 January 1996, accepted for publication 23 April 1996, in final form 15 April 1996
L F Marsal et al 1996 Semicond. Sci. Technol. 11 1209
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