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Electrical model for amorphous/crystalline heterojunction silicon diodes (n a-Si:H/p c-Si)

L F Marsal-+, J Pallarès-+, X Correig-+, J Calderer++ and R Alcubilla++

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Current - voltage characteristics of n-type amorphous/p-type crystalline silicon heterojunction diodes were studied as a function of temperature. From the experimental results, a new, physically based, electrical model describing the device's behaviour for forward voltages was developed. The proposed model separates the rectifying behaviour from the bulk effects of the amorphous silicon layer and correctly predicts the forward current - voltage characteristic from low to high biases in the whole range of considered temperatures. The temperature dependence of the different circuit parameters is used to characterize both the current transport mechanisms and some physical characteristics of the amorphous material.


PACS

84.37.+q Electric variable measurements (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)

85.30.De Semiconductor-device characterization, design, and modeling

85.30.Kk Junction diodes

Subjects

Electronics and devices

Semiconductors

Instrumentation and measurement

Dates

Issue 8 (August 1996)

Received 29 January 1996, accepted for publication 23 April 1996, in final form 15 April 1996



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