T P Chen et al 1996 Semicond. Sci. Technol. 11 672 doi:10.1088/0268-1242/11/5/005
Determination of substrate doping, substrate carrier lifetime and density of surface recombination centres of MOSFETs by gate-controlled-diode measurements
T P Chen, D S H Chan and W K Chim
Show affiliationsA MOSFET with source floating or drain floating or source connected to drain is similar to a gate-controlled-diode structure. In the present study, gate-controlled-diode measurement has been performed for n-channel MOSFETs at room temperature. It is shown that the doping concentration in the substrate region under the gate and the density of the generation - recombination centres at the 
interface can be obtained from the gate-controlled-diode measurement with source floating. In addition, the carrier lifetime in the substrate region can also be determined from the gate-controlled-diode measurement with source connected to drain. As a simple non-destructive technique, the gate-controlled-diode technique provides useful information about the regions of interest at the device level. Furthermore, it does not require special test structures, and it can be carried out for conventional MOSFETs.
- PACS
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
85.30.De Semiconductor-device characterization, design, and modeling
- Subjects
- Dates
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Issue 5 (May 1996)
Received 18 August 1995, accepted for publication 30 January 1996, in final form 2 January 1996
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Determination of substrate doping, substrate carrier lifetime and density of surface recombination centres of MOSFETs by gate-controlled-diode measurements
T P Chen et al 1996 Semicond. Sci. Technol. 11 672
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